Infineon IPD50R500CE: A 500V CoolMOS™ CE Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPD50R500CE, a 500V superjunction MOSFET from the revolutionary CoolMOS™ CE series. This transistor is engineered to set new benchmarks in performance for a wide array of high-efficiency applications, from advanced switch-mode power supplies (SMPS) to industrial motor drives and renewable energy systems.

A defining characteristic of the IPD50R500CE is its exceptionally low specific on-resistance (R DS(on)). With a maximum R DS(on) of just 50 mΩ at a gate-source voltage of 10 V, this device minimizes conduction losses significantly. This allows designers to achieve higher overall system efficiency or to use a smaller form factor without sacrificing thermal performance. The underlying CoolMOS™ technology achieves this by redefining the structure of the classic high-voltage MOSFET, enabling superior switching characteristics and reduced energy loss.

Beyond its static performance, the transistor excels in dynamic operation. It features ultra-low gate charge (Q G) and outstanding switching performance, which are critical for high-frequency operation. Reducing switching losses is paramount in modern power conversion topologies like PFC (Power Factor Correction) stages and LLC resonant converters, where the IPD50R500CE truly shines. Its optimized internal body diode enhances reliability in hard-switching and inductive load conditions, making it a robust choice for demanding environments.

The benefits extend to thermal management and ease of use. The low loss characteristics directly translate into reduced heat generation, alleviating the burden on cooling systems and enabling more compact designs. Furthermore, the device boasts a high dv/dt capability and is designed for ease of drive, simplifying gate driver circuit design and ensuring stable, predictable operation across its specified temperature range.

In summary, the Infineon IPD50R500CE represents a significant leap forward, offering designers a powerful component to build the next generation of energy-efficient and power-dense electronic systems.

ICGOODFIND: The Infineon IPD50R500CE CoolMOS™ CE combines low conduction and switching losses with high robustness, making it an ideal cornerstone technology for enhancing efficiency and power density in modern AC-DC conversion, industrial power, and green energy applications.

Keywords: CoolMOS™ CE, High Efficiency, Low R DS(on), 500V MOSFET, Switching Performance