Infineon IPZ65R045C7 CoolMOS™ P7 Power Transistor: Datasheet, Features, and Application Circuit Design

The relentless pursuit of higher efficiency and power density in modern power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ family. The IPZ65R045C7, a member of the revolutionary CoolMOS™ P7 series, stands as a benchmark for high-performance superjunction (SJ) MOSFETs, engineered to meet the demanding requirements of contemporary switch-mode power supplies (SMPS), server and telecom systems, and industrial applications.

This article delves into the key specifications of this component, its standout features, and provides a practical overview of its implementation in a typical application circuit.

Datasheet Overview and Key Specifications

The datasheet for the IPZ65R045C7 reveals a component optimized for high-voltage switching. The part number itself is descriptive: it is rated for 650V drain-source voltage, and its key metric, the on-state resistance (RDS(on)), is a remarkably low 45 mΩ (max. at 25°C). This low resistance is the primary contributor to its high efficiency, as it minimizes conduction losses.

Other critical specifications extracted from the datasheet include:

Technology: CoolMOS™ P7 superjunction (SJ) technology.

Voltage Rating (VDS): 650 V.

Continuous Drain Current (ID): Up to 23 A (at 100°C case temperature).

RDS(on): 45 mΩ (max. @ VGS = 10 V, TJ = 25°C).

Gate Threshold Voltage (VGS(th)): Typically 3.8 V.

Package: TO-220 FullPAK (fully molded, isolated package), which simplifies thermal management and assembly by not requiring an insulating washer.

Standout Features of the CoolMOS™ P7 IPZ65R045C7

The IPZ65R045C7 is not just another MOSFET; it incorporates several advanced features that set it apart.

1. Exceptional Efficiency: The cornerstone of the P7 series is its superior figure-of-merit (RDS(on) x QG). By achieving an ultra-low RDS(on) and optimizing the gate charge (QG), the IPZ65R045C7 significantly reduces both conduction and switching losses. This leads to cooler operation and higher overall system efficiency, crucial for meeting global energy regulations like 80 PLUS Titanium.

2. Enhanced Robustness and Reliability: This generation offers high immunity against avalanche and repetitive overvoltage spikes, making it exceptionally robust in harsh operating environments. It is designed to withstand dynamic switching events that would damage lesser components.

3. Gate Voltage (VGS) Stability: The P7 technology ensures a stable threshold voltage over temperature and lifetime. This stability is vital for predictable switching behavior and prevents gate-drive-related failures, enhancing the long-term reliability of the end product.

4. Ease of Use and Design-In: The combination of a stable gate voltage, a well-defined safe operating area (SOA), and the isolated FullPAK package makes the IPZ65R045C7 easier to design into new platforms, reducing development time and complexity.

Application Circuit Design: A PFC Stage Example

A prime application for the IPZ65R045C7 is in the critical Power Factor Correction (PFC) boost stage of an AC/DC power supply. Its high voltage rating and low switching losses make it an ideal choice for this hard-switching topology.

In a typical continuous conduction mode (CCM) PFC circuit:

The IPZ65R045C7 is used as the main switch (S1).

A dedicated PFC controller IC drives its gate through a gate driver circuit, ensuring fast and clean switching transitions.

The low RDS(on) minimizes I²R losses as the current flows through the MOSFET during the on-time.

The low gate charge (QG) allows for faster switching speeds with less stress on the gate driver, further improving efficiency at high frequencies.

The 650V rating provides ample headroom for overvoltage transients common on the universal mains input (85 VAC to 265 VAC).

Design considerations include:

Selecting a gate driver capable of sourcing/sinking the required peak current to charge and discharge the input capacitance (Ciss) quickly.

Implementing proper snubber circuits or leveraging the device's innate ruggedness to clamp voltage overshoot.

Ensuring adequate heatsinking, as the isolated FullPAK package can be directly mounted to a heatsink, streamlining thermal design.

ICGOOODFIND: The Infineon IPZ65R045C7 CoolMOS™ P7 represents a significant leap in high-voltage power switching technology. Its blend of ultra-low on-resistance, minimized switching losses, and exceptional robustness makes it a superior choice for designers aiming to push the boundaries of power supply efficiency, density, and reliability. It is a component that directly translates into tangible performance gains for end-users.

Keywords: CoolMOS™ P7, Superjunction MOSFET, High-Efficiency, Power Factor Correction (PFC), RDS(on).