Infineon IPD200N15N3G: High-Performance 15V OptiMOS Power Transistor for Automotive and Industrial Applications

The relentless demand for higher efficiency, greater power density, and enhanced reliability in power electronics has driven continuous innovation in semiconductor technology. Addressing these needs head-on, the Infineon IPD200N15N3G stands out as a premier 15V N-channel power MOSFET engineered for the most demanding automotive and industrial environments. This OptiMOS device exemplifies the cutting-edge of power transistor design, offering an exceptional blend of low losses, robust switching performance, and superior quality.

At the heart of the IPD200N15N3G's performance is its extremely low typical RDS(on) of just 0.2 mΩ. This remarkably low on-state resistance is a game-changer, as it directly translates to minimal conduction losses. In practical terms, this means the transistor dissipates less power as heat during operation, leading to significantly higher system efficiency. This characteristic is paramount for applications like electric power steering (EPS), braking systems, and 48V mild-hybrid starter-generators, where every percentage point of efficiency gain contributes to extended range and reduced thermal management complexity.

Beyond its stellar DC performance, the device is optimized for high-frequency switching. The low gate charge (Qg) and figure of merit (FOM) ensure fast and efficient switching transitions, which are critical for modern switch-mode power supplies (SMPS), DC-DC converters, and motor drive inverters. This allows designers to increase switching frequencies, thereby reducing the size and cost of passive components like inductors and capacitors while maintaining high efficiency.

Recognizing the harsh conditions of its target applications, the IPD200N15N3G is built for unwavering reliability. It features exceptional avalanche ruggedness and a high maximum junction temperature of 175°C. This robustness ensures stable operation under voltage spikes and in high-ambient-temperature environments, such as under the hood of a vehicle or on a factory floor. Furthermore, it is AEC-Q101 qualified, guaranteeing that it meets the stringent quality and reliability standards required for automotive electronic components. The lead-free and RoHS-compliant PG-TO263-3 (D2PAK) package offers a proven industry-standard footprint with excellent power dissipation capabilities.

ICGOOODFIND: The Infineon IPD200N15N3G is a top-tier 15V OptiMOS power transistor that sets a high bar for performance in automotive and industrial systems. Its defining features—an ultra-low RDS(on) of 0.2 mΩ, superior switching characteristics, and AEC-Q101 qualification for automotive ruggedness—make it an ideal and reliable solution for designers aiming to maximize efficiency and power density in challenging applications.

Keywords: Low RDS(on), AEC-Q101 Qualified, Automotive Grade, High Efficiency, OptiMOS Technology