Infineon IPD068N10N3G: A 100V OptiMOS 3 Power Transistor for High-Efficiency Automotive Applications

The relentless drive towards greater efficiency, reliability, and performance in automotive systems demands power components that can meet increasingly stringent requirements. The Infineon IPD068N10N3G stands out as a pivotal solution, a 100V N-channel power MOSFET engineered specifically for the harsh environment of modern vehicles. As part of Infineon's renowned OptiMOS™ 3 family, this transistor is designed to deliver exceptional power density and switching efficiency in a wide array of applications, from electric power steering (EPS) and braking systems to DC-DC converters and battery management.

A key strength of the IPD068N10N3G lies in its outstanding low on-state resistance (R DS(on)) of just 6.8 mΩ maximum. This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. For automotive designers, this means the ability to handle high currents with greater reliability or to design more compact systems with reduced cooling requirements. Furthermore, the device's 100% avalanche tested ruggedness ensures unparalleled robustness, a critical factor for sustaining voltage transients and inductive load spikes common in automotive electrical environments.

The transistor is also characterized by its high switching speed and low gate charge, which significantly reduce switching losses. This feature is particularly beneficial for high-frequency switching applications like switch-mode power supplies (SMPS), enabling designers to push the boundaries of power density. The combination of low R DS(on) and superior switching performance makes the IPD068N10N3G a cornerstone for improving the overall efficiency of 12V and 48V boardnet systems.

Packaged in a space-saving SuperSO8 (SSO-8) package, the component offers an excellent power-to-footprint ratio. This compact form factor is ideal for the space-constrained confines of automotive electronic control units (ECUs). Its AEC-Q101 qualification guarantees that it meets the rigorous quality and reliability standards mandated for automotive components, ensuring long-term performance under extreme temperatures and demanding operating conditions.

In summary, the Infineon IPD068N10N3G provides a compelling blend of efficiency, power density, and automotive-grade reliability, making it an optimal choice for next-generation vehicle architectures focused on electrification and energy savings.

ICGOOODFIND: The Infineon IPD068N10N3G is a high-performance, automotive-grade MOSFET that excels in delivering maximum efficiency and ruggedness for demanding 12V/48V automotive applications, thanks to its ultra-low R DS(on), high switching speed, and proven reliability.

Keywords: OptiMOS™ 3, Low R DS(on), Automotive AEC-Q101, High Switching Efficiency, Power Density