Infineon IAUC100N04S6N015: High-Performance N-Channel MOSFET for Advanced Power Management Applications

The relentless drive for higher efficiency, greater power density, and improved thermal performance in modern electronics places immense demands on power switching components. At the heart of many advanced power management systems, from server and telecom infrastructure to high-end consumer chargers and automotive applications, lies the MOSFET. The Infineon IAUC100N04S6N015 stands out as a premier N-channel power MOSFET engineered to meet these exacting challenges head-on.

This device is a testament to Infineon's leadership in power semiconductor technology. Built upon an advanced OptiMOS™ 6 40 V technology platform, it is specifically designed to deliver ultra-low power losses. The key to its performance is an exceptionally low typical on-state resistance (RDS(on)) of just 1.0 mΩ. This minimal resistance is crucial for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact designs by requiring less cooling.

Beyond its impressive RDS(on), the IAUC100N04S6N015 is optimized for switching performance. It features low gate charge (Qg) and low output charge (Qoss), enabling faster switching frequencies. This allows power supply designers to push the boundaries of their designs, utilizing smaller magnetic components and capacitors to achieve higher power density without sacrificing efficiency. The combination of low RDS(on) and superior switching characteristics makes it an ideal choice for demanding applications like synchronous rectification in switched-mode power supplies (SMPS), DC-DC converters, and motor control circuits.

The component is offered in the space-saving SuperSO8 package (PG-TSDSON-8), which provides an excellent thermal footprint. This packaging technology ensures efficient heat dissipation from the die to the printed circuit board (PCB), supporting sustained high-performance operation under load. Furthermore, the MOSFET is qualified for automotive applications, adhering to the stringent AEC-Q101 standard, which underscores its robustness, reliability, and capability to perform in harsh environments.

In summary, the Infineon IAUC100N04S6N015 is not just a MOSFET; it is a high-performance solution that addresses the core needs of next-generation power management.

ICGOODFIND: The Infineon IAUC100N04S6N015 is a top-tier OptiMOS™ 6 40V N-channel MOSFET that sets a high bar for performance. Its defining feature is an ultra-low 1.0 mΩ RDS(on), which is pivotal for maximizing efficiency and power density in demanding applications. Coupled with excellent switching characteristics and a thermally efficient SuperSO8 package, it is an outstanding choice for designers aiming to optimize advanced power systems in industrial, computing, and automotive sectors.

Keywords: OptiMOS™ 6, Low RDS(on), High Power Density, SuperSO8 Package, Automotive Grade (AEC-Q101)