Infineon IPW60R070P6 CoolMOS™ P6 Power Transistor: Datasheet, Application Notes, and Design Considerations
The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ family, with the IPW60R070P6 standing out as a prime example of advanced performance in a TO-247 package. This superjunction MOSFET, rated for 650 V and 25 A, is engineered to set new benchmarks in switching performance and ease of use.
Key Datasheet Parameters and Features
The datasheet for the IPW60R070P6 reveals its core strengths. The most striking specification is its exceptionally low typical on-state resistance (RDS(on)) of just 70 mΩ at a gate-source voltage of 10 V. This low resistance is the primary contributor to minimizing conduction losses, a critical factor in high-current applications. Furthermore, the device boasts an outstanding figure-of-merit (FOM, RDS(on) x Qg), which signifies an optimal balance between conduction and switching losses. The low gate charge (Qg) of 45 nC ensures that the MOSFET can be driven quickly and efficiently, reducing stress on the gate driver circuitry. These characteristics make it a superior choice over older generations of high-voltage MOSFETs.
Primary Application Notes
The IPW60R070P6 is designed for high-performance switching applications. Its primary use cases include:
Switched-Mode Power Supplies (SMPS): It is ideally suited for high-efficiency telecom server, and industrial SMPS,
particularly in power factor correction (PFC) and LLC resonant converter stages, where low losses directly translate to higher system efficiency.
Solar Inverters and UPS Systems: The high voltage rating and robust performance make it an excellent candidate for renewable energy applications and uninterruptible power supplies, where reliability under demanding conditions is paramount.
Motor Control and Driving: In inverter stages for motor drives, the fast switching speed and high efficiency help achieve precise control and reduce thermal management overhead.
Critical Design Considerations
Successfully integrating the IPW60R070P6 into a design requires careful attention to several areas:
1. Gate Driving: To fully leverage its fast switching capability, a low-impedance, powerful gate driver is essential. The driver must be capable of sourcing and sinking sufficient peak current to rapidly charge and discharge the input capacitance, minimizing switching transition times.
2. PCB Layout: High-frequency switching demands an optimized PCB layout to minimize parasitic inductance. This involves using short and wide trace connections for the power loop (drain-source) and gate drive loop. Proper placement of decoupling capacitors close to the device terminals is non-negotiable for stable operation.
3. Thermal Management: Despite its low RDS(on), managing power dissipation is crucial. A properly sized heatsink and the use of thermal compound are required to maintain the junction temperature within safe limits, ensuring long-term reliability. The datasheet provides essential thermal impedance values for these calculations.
4. Avalanche Ruggedness and Body Diode: The CoolMOS™ P6 technology is designed for high avalanche ruggedness, enhancing its resilience against voltage spikes. Designers should also consider the reverse recovery characteristics of the intrinsic body diode when operating in hard-switching or bridge topologies.
ICGOOODFIND
The Infineon IPW60R070P6 CoolMOS™ P6 represents a significant leap in high-voltage power transistor technology. Its industry-leading low RDS(on) and excellent switching characteristics make it a pivotal component for designers aiming to push the boundaries of power density and energy efficiency. By adhering to rigorous design practices concerning gate driving, layout, and thermal management, engineers can fully harness its potential to create the next generation of compact, efficient, and reliable power systems.
Keywords: CoolMOS P6, Low RDS(on), High-Efficiency SMPS, Power Density, Superjunction MOSFET
